A 0.75-V, 4-μW, 15-ppm/°C, 190°C temperature range, voltage reference

被引:14
|
作者
Andreou, Charalambos M. [1 ]
Georgiou, Julius [1 ]
机构
[1] Univ Cyprus, Dept Elect & Comp Engn, Univ House Anastasios G Leventis, CY-1678 Nicosia, Cyprus
关键词
analog integrated circuits; bandgap voltage reference; BGR; CMOS; temperature curvature compensation; reference circuits; subthreshold; low voltage; low power; temperature coefficient; temperature drift; voltage reference; REFERENCE CIRCUIT; PPM/DEGREES-C; BANDGAP; SUB-1-V;
D O I
10.1002/cta.2122
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A low-voltage, low-power, low-area, wide-temperature-range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/degrees C for an extremely wide temperature range of 190 degrees C (-60 to 130 degrees C) while consuming only 4 W at 0.75 V. It performs a high-order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade-off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18-mu m standard CMOS technology and occupies an area of 0.039 mm(2). The proposed reference circuit is suitable for high-precision, low-energy-budget applications, such as mobile systems, wearable electronics, and energy harvesting systems. Copyright (C) 2015 John Wiley & Sons, Ltd.
引用
收藏
页码:1029 / 1038
页数:10
相关论文
共 50 条
  • [21] A Sub-1V Nanowatt CMOS Bandgap Voltage Reference with Temperature Coefficient of 13ppm/°C
    Fakharyan, Iman
    Ehsanian, Mehdi
    [J]. 2015 23RD IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2015, : 1129 - 1132
  • [22] A 0.85V, 4.9 ppm/°C inherent temperature compensated voltage reference with-82 dB PSRR
    Zhou, Ze-kun
    Shi, Wang
    Yuan, Yan-dong
    Shi, Yue
    Zhang, Bo
    Hua, Qing
    [J]. IEICE ELECTRONICS EXPRESS, 2018, 15 (22):
  • [23] A self-calibrated bandgap voltage reference with 0.5 ppm/°C temperature coefficient
    Jin, Le
    Xing, Hanqing
    Chen, Degang
    Geiger, Randall
    [J]. 2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGS, 2006, : 2853 - +
  • [24] A 0.52 ppm/A°C high-order temperature-compensated voltage reference
    Liu, Yonggen
    Li, Zhaoji
    Luo, Ping
    Zhang, Bo
    [J]. ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2010, 62 (01) : 17 - 21
  • [25] A Novel Low Voltage Subtracting BandGap Reference with Temperature Coefficient of 2.2 ppm/°C
    Zhu, Wen-rui
    Yang, Hai-gang
    Gao, Tong-qiang
    [J]. 2011 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2011, : 2281 - 2284
  • [26] A 0.52 ppm/°C high-order temperature-compensated voltage reference
    Yonggen Liu
    Zhaoji Li
    Ping Luo
    Bo Zhang
    [J]. Analog Integrated Circuits and Signal Processing, 2010, 62 : 17 - 21
  • [27] A 3.2 ppm/°C curvature-compensated bandgap reference with wide supply voltage range
    Zhou, Ze-Kun
    Ou, Xue-Chun
    Shi, Yue
    Zhu, Pei-Sheng
    Ma, Ying-Qian
    Qiu, Shi
    Ming, Xin
    Zhang, Bo
    [J]. MICROELECTRONICS JOURNAL, 2012, 43 (11) : 863 - 868
  • [28] A 2.1-ppm/°C all-MOSFET voltage reference with a 1.2-V supply voltage
    Xu, Huachao
    Zhang, Yuanzhi
    Liang, Ke
    Hu, Jinlong
    Lu, Chao
    Li, Guofeng
    [J]. IEICE ELECTRONICS EXPRESS, 2018, 15 (23):
  • [29] A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference
    Cheng, Tiedong
    Gong, Xinlv
    [J]. MICROELECTRONICS JOURNAL, 2024, 152
  • [30] 0.3 V Supply, 17 ppm/°C 3-Transistor Picowatt Voltage Reference
    de Oliveira, Arthur Campos
    Caicedo, Jhon Gomez
    Klimach, Hamilton Duarte
    Bampi, Sergio
    [J]. 2016 IEEE 7TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS & SYSTEMS (LASCAS), 2016, : 263 - 266