A Sub-1V Nanowatt CMOS Bandgap Voltage Reference with Temperature Coefficient of 13ppm/°C

被引:0
|
作者
Fakharyan, Iman [1 ]
Ehsanian, Mehdi [1 ]
机构
[1] KN Toosi Univ Technol, Fac Elect Engn, Res Lab High Frequency Circuits & Syst, Tehran, Iran
关键词
Bandgap voltage reference; Low voltage; Nanowatt; Reference circuit; Subthreshold; Resistorless;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, a fully-MOSFET nanowatt bandgap voltage reference (BVR) is presented. Biased in weak-inversion region, self-cascade composite transistors have been used in the proposed BVR. The circuit has been designed and simulated in 0.18-mu m standard CMOS technology. The simulation results show that the proposed BVR circuit generates a reference voltage of 630mV, obtaining temperature coefficient of 13 ppm/degrees C in the temperature range of -25 degrees C to 110 degrees C. The circuit draws 18nA from a 0.9-V supply.
引用
收藏
页码:1129 / 1132
页数:4
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