A 0.55 V Bandgap Reference with a 59 ppm/°C Temperature Coefficient

This paper presents a novel low power, low voltage CMOS bandgap reference (BGR) that overcomes the problems with the existing BJT-based reference circuits by using a MOS transistor operating in sub-threshold region. A proportional to absolute temperature (PTAT) voltage is generated by exploiting the self-bias cascode branch, while a Complementary to Absolute Temperature (CTAT) voltage is generated by using the threshold voltage of the transistor. The proposed circuit is implemented in 65 nm CMOS technology. Post-layout simulation results show that the proposed circuit works with a supply voltage of 0.55 V, and generates a 286 mV reference voltage with a temperature coefficient of 59 ppm/degrees C. The circuit takes 413 nA current from 0.55V supply and occupies 0.00986 mm(2) of active area.