A Sub-1V Nanowatt CMOS Bandgap Voltage Reference with Temperature Coefficient of 13ppm/°C

被引：0

作者：

Fakharyan, Iman ^{[1
]}

Ehsanian, Mehdi ^{[1
]}

机构：

[1] KN Toosi Univ Technol, Fac Elect Engn, Res Lab High Frequency Circuits & Syst, Tehran, Iran

来源：

2015 23RD IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE) | 2015年

关键词：

Bandgap voltage reference; Low voltage; Nanowatt; Reference circuit; Subthreshold; Resistorless;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, a fully-MOSFET nanowatt bandgap voltage reference (BVR) is presented. Biased in weak-inversion region, self-cascade composite transistors have been used in the proposed BVR. The circuit has been designed and simulated in 0.18-mu m standard CMOS technology. The simulation results show that the proposed BVR circuit generates a reference voltage of 630mV, obtaining temperature coefficient of 13 ppm/degrees C in the temperature range of -25 degrees C to 110 degrees C. The circuit draws 18nA from a 0.9-V supply.

引用

页码：1129 / 1132

页数：4

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