A sub-1V low-noise bandgap voltage reference

被引:3
|
作者
Sanborn, Keith E. [1 ]
Ma, Dongsheng [2 ]
Ivanov, Yadim V.
机构
[1] Univ Arizona, Dept Elect & Comp Engn, Tucson, AZ 85721 USA
[2] Nankai Univ, Tianjin, Peoples R China
关键词
D O I
10.1109/CICC.2006.320833
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A sub-1 V bandgap voltage reference is presented. The topology allows the reference to operate with low voltage supply, by employing reverse bandgap voltage generation. It also has attractive low-noise feature, without the use of any large external filtering capacitors. Theoretical analysis and experimental results show that the output noise spectral density is 40 nV/rectangle Hz with a peak-to-peak output noise in 0.1 to 10 Hz band of 4 rectangle V. The reference has a mean output voltage of 190.9 mV at room temperature. Temperature coefficient of the reference voltage in rectangle 40 degrees C to +125 degrees C range is 11 ppm/degrees C (mean) with a standard deviation of 5 ppm/degrees C. The design is compatible with most CMOS and BiCMOS fabrication processes.
引用
收藏
页码:607 / 610
页数:4
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