A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference

被引:0
|
作者
Cheng, Tiedong [1 ]
Gong, Xinlv [1 ]
机构
[1] Jiangxi Univ Sci & Technol, Sch Elect Engn & Automat, Ganzhou 341001, Peoples R China
来源
MICROELECTRONICS JOURNAL | 2024年 / 152卷
关键词
Low power; Subthreshold; CMOS voltage reference; Temperature coefficient; REFERENCE CIRCUIT; PSRR; BANDGAP;
D O I
10.1016/j.mejo.2024.106389
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
- A low temperature coefficient (TC), low power subthreshold CMOS voltage reference (CVR) over a wide temperature range is presented in this paper. The proposed circuit employs the voltage difference between the two inputs of the operational amplifier as the proportional to absolute temperature (PTAT) voltage and the complementary to absolute temperature (CTAT) voltage, which is obtained by the Delta V GS of different-threshold transistors biased in the subthreshold region. The proposed CVR was designed in the 0.18-mu m CMOS process with a total area of 0.0049 mm2. 2 . It achieves an average temperature coefficient (TC) of 10.3 ppm/degrees C degrees C over a temperature range of-40 degrees C-120 degrees C, with a TC of 4.9 ppm/degrees C degrees C at the TT corner. The measured power supply rejection ratio (PSRR) is-65 dB at 10 Hz and-30 dB at 1 MHz, while the power consumption is 59 nW at a supply voltage of 1 V. The average line sensitivity (LS) is 0.16 %/V, and the LS is 0.09 %/V at the TT corner.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] A 300 nW, 15 ppm/°C, 20 ppm/V CMOS Voltage Reference Circuit Consisting of Subthreshold MOSFETs
    Ueno, Ken
    Hirose, Tetsuya
    Asai, Tetsuya
    Amemiya, Yoshihito
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (07) : 2047 - 2054
  • [2] An All-subthreshold, 0.75V Supply, 2ppm/°C, CMOS Voltage Reference
    Andreou, Charalambos M.
    Georgiou, Julius
    [J]. 2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2013, : 1476 - 1479
  • [3] A 300 nW, 7 ppm/°C CMOS Voltage Reference Circuit based on Subthreshold MOSFETs
    Ueno, Ken
    Hirose, Tetsuya
    Asai, Tetsuya
    Amemiya, Yoshihito
    [J]. PROCEEDINGS OF THE ASP-DAC 2009: ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE 2009, 2009, : 95 - +
  • [4] A 2.1 ppm/°C, 0.55-2.4 V, 5.6 nW, 235 mV, CMOS-only subthreshold voltage reference
    Duan, Quanzhen
    Lin, Chenxi
    Liu, Peiju
    Huang, S.
    Meng, Zhen
    [J]. MICROELECTRONICS JOURNAL, 2021, 113 (113)
  • [5] A 0.6-V Minimum-Supply, 23.5 ppm/°C Subthreshold CMOS Voltage Reference With 0.45% Variation Coefficient
    Huang, Chenyu
    Zhan, Chenchang
    He, Linjun
    Wang, Lidan
    Nan, Yang
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65 (10) : 1290 - 1294
  • [6] A 3.9ppm/°C 8.8nW and High PSRR Subthreshold CMOS Multiple Voltage Reference
    Jiang Mei
    Li Yongquan
    Yang Zhi
    [J]. CHINESE JOURNAL OF ELECTRONICS, 2017, 26 (01) : 101 - 105
  • [7] A 0.6-V, 1.56-nW, 5.87-ppm/°C, 0.23%/V CMOS-Only Subthreshold Voltage Reference with the Threshold Voltage Difference
    Xin Xin
    Yuanhao Hu
    Jueping Cai
    Siwan Dong
    Xingyuan Tong
    [J]. Circuits, Systems, and Signal Processing, 2022, 41 : 4256 - 4274
  • [8] A 0.6-V, 1.56-nW, 5.87-ppm/°C, 0.23%/V CMOS-Only Subthreshold Voltage Reference with the Threshold Voltage Difference
    Xin, Xin
    Hu, Yuanhao
    Cai, Jueping
    Dong, Siwan
    Tong, Xingyuan
    [J]. CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2022, 41 (08) : 4256 - 4274
  • [9] A 1.2V supply 0.58 ppm/°C CMOS bandgap voltage reference
    Hu, Jinlong
    Xu, Huachao
    Zhang, Yuanzhi
    Sun, Jie
    Du, Tao
    Lu, Chao
    Li, Guofeng
    [J]. IEICE ELECTRONICS EXPRESS, 2018, 15 (16):
  • [10] A 0.7 V, 2.7 μW, 12.9 ppm/° C over 180° C CMOS subthreshold voltage reference
    Andreou, Charalambos M.
    Georgiou, Julius
    [J]. INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2017, 45 (10) : 1349 - 1368