RC-SCR: A novel low-voltage ESD protection circuit with new triggering mechanism

被引：0

作者：

Feng, H ^{[1
]}

Zhan, R ^{[1
]}

Wu, Q ^{[1
]}

Chen, G ^{[1
]}

Guan, X ^{[1
]}

Wang, AZ ^{[1
]}

机构：

[1] IIT, Dept Elect & Comp Engn, Integrated Elect Lab, Chicago, IL 60616 USA

来源：

APCCAS 2002: ASIA-PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, VOL 2, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Several techniques exist to realize low triggering of SCR (Si-controlled rectifier) ESD (electrostatic discharging) protection structures in CMOS technologies. This paper reports a novel RC-SCR (RC-coupled SCR) ESD protection circuit using a new RC-coupling-based triggering mechanism to further reduce triggering voltage. Implementation in a commercial 0.35mum CMOS process results in a very low triggering of 7V, representing a 28% further reduction from existing low-triggering-voltage SCR ESD protection designs.

引用

页码：97 / 100

页数：4

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