RC-SCR: A novel low-voltage ESD protection circuit with new triggering mechanism

被引:0
|
作者
Feng, H [1 ]
Zhan, R [1 ]
Wu, Q [1 ]
Chen, G [1 ]
Guan, X [1 ]
Wang, AZ [1 ]
机构
[1] IIT, Dept Elect & Comp Engn, Integrated Elect Lab, Chicago, IL 60616 USA
关键词
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Several techniques exist to realize low triggering of SCR (Si-controlled rectifier) ESD (electrostatic discharging) protection structures in CMOS technologies. This paper reports a novel RC-SCR (RC-coupled SCR) ESD protection circuit using a new RC-coupling-based triggering mechanism to further reduce triggering voltage. Implementation in a commercial 0.35mum CMOS process results in a very low triggering of 7V, representing a 28% further reduction from existing low-triggering-voltage SCR ESD protection designs.
引用
收藏
页码:97 / 100
页数:4
相关论文
共 50 条
  • [21] Comparison Between High-Holding-Voltage SCR and Stacked Low-Voltage Devices for ESD Protection in High-Voltage Applications
    Dai, Chia-Tsen
    Ker, Ming-Dou
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (02) : 798 - 802
  • [22] Novel Ring Silicon-Controlled Rectifier for ESD Protection of Low-Voltage Circuits
    Yu, Fangjun
    Zhu, Xinyu
    Deng, Feifan
    Chen, Yipeng
    Dong, Shurong
    [J]. 2022 INTERNATIONAL EOS/ESD SYMPOSIUM ON DESIGN AND SYSTEM (IEDS), 2022,
  • [23] Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications
    Bouangeune, Daoheung
    Vilathong, Sengchanh
    Cho, Deok-Ho
    Shim, Kyu-Hwan
    Leem, See-Jong
    Choi, Chel-Jong
    [J]. Journal of Semiconductor Technology and Science, 2014, 14 (06) : 797 - 801
  • [24] Design of a LVTSCR triggered SCR device for low voltage ESD protection
    Liu, Wei
    Yang, Hongjiao
    Wang, Yang
    Li, Shuang
    Tao, Hongke
    Zeng, Zhiwen
    [J]. MICROELECTRONICS JOURNAL, 2024, 149
  • [25] An Improved Silicon-Controlled Rectifier (SCR) for Low-Voltage ESD Application
    Du, Feibo
    Hou, Fei
    Song, Wenqiang
    Chen, Long
    Nie, Yanlin
    Qing, Yihong
    Xu, Yichen
    Liu, Jizhi
    Liu, Zhiwei
    Liou, Juin J.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (02) : 576 - 581
  • [26] Capacitor-couple ESD protection circuit for deep-submicron low-voltage CMOS ASIC
    Ker, MD
    Wu, CY
    Cheng, T
    Chang, HH
    [J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 1996, 4 (03) : 307 - 321
  • [27] SCR-based ESD Protection Circuit with Low Trigger Voltage and High Robustness by Inserting the NMOS Structure
    Lee, Byung-Seok
    Koo, Yong-Seo
    [J]. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19 (03) : 300 - 304
  • [28] ESD protection of the high voltage tolerant pins in low-voltage BiCMOS processes
    Vashchenko, VA
    ter Beek, M
    Kindt, W
    Hopper, P
    [J]. PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 277 - 280
  • [29] ESD protection circuit with low triggering voltage and fast turn-on using substrate-triggered technique
    Koo, Yong-Seo
    Kim, Kwi-Dong
    Kwon, Jong-Kee
    [J]. IEICE ELECTRONICS EXPRESS, 2009, 6 (08): : 467 - 471
  • [30] Compact and Low Leakage Devices for Bidirectional Low-Voltage ESD Protection Applications
    Du, Feibo
    Qing, Yihong
    Hou, Fei
    Zou, Kepeng
    Song, Wenqiang
    Chen, Ruibo
    Liu, Jizhi
    Chen, Le
    Liou, Juin J.
    Liu, Zhiwei
    [J]. IEEE ELECTRON DEVICE LETTERS, 2021, 42 (03) : 391 - 394