Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film

被引：14

作者：

Sahu, Rajib ^{[1
,2
]}

Gholap, Hari Bhau ^{[3
]}

Mounika, Gandi ^{[4
]}

Dileep, Krishnan ^{[1
,2
]}

Vishal, Badri ^{[1
,2
]}

Ghara, Somnath ^{[2
]}

Datta, Ranjan ^{[1
,2
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[3] Savitribai Phule Pune Univ, Fergusson Coll, Dept Phys, Pune 411004, Maharashtra, India

[4] Indian Inst Sci, Undergratuate Program, Bangalore 560012, Karnataka, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 03期

关键词：

ZnO; thins films; doping; p-type conductivity; density functional theory; pulsed laser deposition; PHOTOLUMINESCENCE; GAP;

D O I：

10.1002/pssb.201552625

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：504 / 508

页数：5

共 50 条

[1] p-type conduction in N-Al co-doped ZnO thin films
Lu, JG
Ye, ZZ
Zhuge, F
Zeng, YJ
Zhao, BH
Zhu, LP
APPLIED PHYSICS LETTERS, 2004, 85 (15) : 3134 - 3135
[2] Effect of oxygen pressure on the p-type conductivity of Ga, P co-doped ZnO thin film grown by pulsed laser deposition
Noh, Woo-Seok
Lee, Jung-A
Lee, Joon-Hyung
Heo, Young-Woo
Kim, Jeong-Joo
CERAMICS INTERNATIONAL, 2016, 42 (03) : 4136 - 4142
[3] An investigation of the electrical properties of p-type Al:N Co-doped ZnO thin films
Balasubramaniam Saravanakumar
Rajneesh Mohan
Sang-Jae Kim
Journal of the Korean Physical Society, 2012, 61 : 1737 - 1741
[4] An investigation of the electrical properties of p-type Al:N Co-doped ZnO thin films
Saravanakumar, Balasubramaniam
Mohan, Rajneesh
Kim, Sang-Jae
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (10) : 1737 - 1741
[5] Stability of p-type conductivity in nitrogen-doped ZnO thin film
Xiao, Z. Y.
Liu, Y. C.
Mu, R.
Zhao, D. X.
Zhang, J. Y.
APPLIED PHYSICS LETTERS, 2008, 92 (05)
[6] Mechanism of p-type conductivity for phosphorus-doped ZnO thin film
Yao, B.
Xie, Y. P.
Cong, C. X.
Zhao, H. J.
Sui, Y. R.
Yang, T.
He, Q.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (01)
[7] Stable p-type conductivity and enhanced photoconductivity from nitrogen-doped annealed ZnO thin film
Dhara, Soumen
Giri, P. K.
THIN SOLID FILMS, 2012, 520 (15) : 5000 - 5006
[8] P-Type conduction in Al-N co-doped ZnO films
Yuan, GD
Ye, ZZ
Zhu, LP
Zeng, YJ
Huang, JY
Qian, Q
Lu, JG
MATERIALS LETTERS, 2004, 58 (29) : 3741 - 3744
[9] First-principles study of p-type conductivity of N-Al/Ga/In co-doped ZnO
Li Honglin
Lv Yingbo
Li Jinzhu
Yu Ke
PHYSICA SCRIPTA, 2015, 90 (02)
[10] The mechanism of Li, N dual-acceptor co-doped p-type ZnO
Duan, X. -Y.
Yao, R. -H.
Zhao, Y. -J.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 91 (03): : 467 - 472

← 1 2 3 4 5 →