Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film

被引：14

作者：

Sahu, Rajib ^{[1
,2
]}

Gholap, Hari Bhau ^{[3
]}

Mounika, Gandi ^{[4
]}

Dileep, Krishnan ^{[1
,2
]}

Vishal, Badri ^{[1
,2
]}

Ghara, Somnath ^{[2
]}

Datta, Ranjan ^{[1
,2
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[3] Savitribai Phule Pune Univ, Fergusson Coll, Dept Phys, Pune 411004, Maharashtra, India

[4] Indian Inst Sci, Undergratuate Program, Bangalore 560012, Karnataka, India

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 03期

关键词：

ZnO; thins films; doping; p-type conductivity; density functional theory; pulsed laser deposition; PHOTOLUMINESCENCE; GAP;

D O I：

10.1002/pssb.201552625

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：504 / 508

页数：5

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