Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film

被引：14
|
作者：
Sahu, Rajib [1 ,2 ]
Gholap, Hari Bhau [3 ]
Mounika, Gandi [4 ]
Dileep, Krishnan [1 ,2 ]
Vishal, Badri [1 ,2 ]
Ghara, Somnath [2 ]
Datta, Ranjan [1 ,2 ]
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
[3] Savitribai Phule Pune Univ, Fergusson Coll, Dept Phys, Pune 411004, Maharashtra, India
[4] Indian Inst Sci, Undergratuate Program, Bangalore 560012, Karnataka, India
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2016年 / 253卷 / 03期
关键词：
ZnO; thins films; doping; p-type conductivity; density functional theory; pulsed laser deposition; PHOTOLUMINESCENCE; GAP;
D O I：
10.1002/pssb.201552625
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：504 / 508
页数：5
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