Tunable Quantum Confinement Effect on Non-Volatile Thin Film Polymer Memory Device

被引:0
|
作者
Hong, Augustin J. [1 ]
Wang, Kang L. [1 ]
Kwan, Wei Lek
Yang, Yang
Parra, Dayanara
Tolbert, Sarah
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
关键词
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Several dodecanethiol capped An nanoparticles (Au-DT) less than 5 nm in size were synthesized for the fabrication of a non-volatile polymer memory device (PMD). Size characterizations of Au-DTs were confirmed by XRD and (1)H NMR. The PMD consisted of a polystyrene thin Film containing Au-DT and 8-Hydroquinoline (8-HQ) sandwiched between two aluminum electrodes. The device exhibited desired "write", "read" and "erase" steps of a memory cycle. Quantum confinement effects were apparent because electronic properties of the device depended oil the nanoparticle size. An energy band diagram for the quantized charging and a novel conducting mechanism were suggested.
引用
收藏
页码:97 / 102
页数:6
相关论文
共 50 条
  • [1] Programmable polymer thin film and non-volatile memory device
    Jianyong Ouyang
    Chih-Wei Chu
    Charles R. Szmanda
    Liping Ma
    Yang Yang
    Nature Materials, 2004, 3 : 918 - 922
  • [2] Programmable polymer thin film and non-volatile memory device
    Ouyang, JY
    Chu, CW
    Szmanda, CR
    Ma, LP
    Yang, Y
    NATURE MATERIALS, 2004, 3 (12) : 918 - 922
  • [3] Non-volatile memory device using a polymer modified nanocrystal
    Kiazadeh, A.
    Gomes, H. L.
    Rosa da Costa, A. M.
    Moreira, J. A.
    de Leeuw, D. M.
    Meskers, S. C. J.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (19): : 1552 - 1555
  • [4] Transparent non-volatile memory device using silicon quantum dots
    Park, Nae-Man
    Shin, Jaeheon
    Kim, Bosul
    Kim, Kyung Hyun
    Cheong, Woo-Seok
    ELECTRONIC MATERIALS LETTERS, 2013, 9 (04) : 467 - 469
  • [5] Transparent non-volatile memory device using silicon quantum dots
    Nae-Man Park
    Jaeheon Shin
    Bosul Kim
    Kyung Hyun Kim
    Woo-Seok Cheong
    Electronic Materials Letters, 2013, 9 : 467 - 469
  • [6] Electrical Re-Writable Non-Volatile Memory Device Based on PEDOT:PSS Thin Film
    Salaoru, Iulia
    Pantelidis, Christos Christodoulos
    MICROMACHINES, 2020, 11 (02)
  • [7] The microstructure investigation of GeTi thin film used for non-volatile memory
    Shen, Jie
    Liu, Bo
    Song, Zhitang
    Xu, Cheng
    Liang, Shuang
    Feng, Songlin
    Chen, Bomy
    APPLIED SURFACE SCIENCE, 2008, 254 (15) : 4638 - 4643
  • [8] PLZT THIN-FILM GATE NON-VOLATILE MEMORY FET
    MATSUI, Y
    HIGUMA, Y
    OKUYAMA, M
    NAKAGAWA, T
    HAMAKAWA, Y
    FERROELECTRICS, 1978, 19 (3-4) : 166 - 166
  • [9] Control of Thin Ferroelectric Polymer Films for Non-volatile Memory Applications
    Park, Youn Jung
    Bae, In-sung
    Kang, Seok Ju
    Chang, Jiyoun
    Park, Cheolmin
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2010, 17 (04) : 1135 - 1163
  • [10] Non-volatile memory device- using a blend of polymer and ferroelectric nanoparticles
    Salaoru, I.
    Paul, S.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2008, 10 (12): : 3461 - 3464