Tunable Quantum Confinement Effect on Non-Volatile Thin Film Polymer Memory Device

被引:0
|
作者
Hong, Augustin J. [1 ]
Wang, Kang L. [1 ]
Kwan, Wei Lek
Yang, Yang
Parra, Dayanara
Tolbert, Sarah
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源
POLYMER-BASED SMART MATERIALS - PROCESSES, PROPERTIES AND APPLICATION | 2009年 / 1134卷
关键词
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Several dodecanethiol capped An nanoparticles (Au-DT) less than 5 nm in size were synthesized for the fabrication of a non-volatile polymer memory device (PMD). Size characterizations of Au-DTs were confirmed by XRD and (1)H NMR. The PMD consisted of a polystyrene thin Film containing Au-DT and 8-Hydroquinoline (8-HQ) sandwiched between two aluminum electrodes. The device exhibited desired "write", "read" and "erase" steps of a memory cycle. Quantum confinement effects were apparent because electronic properties of the device depended oil the nanoparticle size. An energy band diagram for the quantized charging and a novel conducting mechanism were suggested.
引用
收藏
页码:97 / 102
页数:6
相关论文
共 50 条
  • [21] PBTIO3 THIN-FILM GATE NON-VOLATILE MEMORY FET
    MATSUI, Y
    NAKANO, H
    OKUYAMA, M
    NAKAGAWA, T
    HAMAKAWA, Y
    FERROELECTRICS, 1980, 29 (1-2) : 126 - 127
  • [22] ZnO as a dielectric for organic thin film transistor-based non-volatile memory
    Salim, N. Tjitra
    Aw, K. C.
    Gao, W.
    Li, Z. W.
    Wright, B.
    MICROELECTRONIC ENGINEERING, 2009, 86 (10) : 2127 - 2131
  • [23] An organic thin film transistor based non-volatile memory with zinc oxide nanoparticles
    Lee, W. K.
    Aw, K. C.
    Wong, H. Y.
    Chan, K. Y.
    Leung, M.
    Salim, N. Tjitra
    THIN SOLID FILMS, 2011, 519 (15) : 5208 - 5211
  • [24] Tunable Non-Volatile Memory by Conductive Ferroelectric Domain Walls in Lithium Niobate Thin Films
    Kaempfe, Thomas
    Wang, Bo
    Haussmann, Alexander
    Chen, Long-Qing
    Eng, Lukas M.
    CRYSTALS, 2020, 10 (09): : 1 - 11
  • [25] Non-volatile memory
    Casagrande, Giulio
    Chung, Shine
    Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2008, 51
  • [26] Effect of Au nanocrystals embedded in conductive polymer on non-volatile memory window
    Seung, Hyun Min
    Lee, Jong Dae
    Han, Byeong-Il
    Lee, Gon-Sub
    Park, Jea-Gun
    MATERIALS SCIENCE AND TECHNOLOGY FOR NONVOLATILE MEMORIES, 2008, 1071 : 141 - 146
  • [27] Non-volatile memory
    Sofer, Yair
    Oowaki, Yukihito
    Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2005, 48
  • [28] Graphene oxide (GO)/reduced-GO and their composite with conducting polymer nanostructure thin films for non-volatile memory device
    Ray, Sekhar C.
    Bhunia, Susanta Kumar
    Saha, Arindam
    Jana, Nikhil R.
    MICROELECTRONIC ENGINEERING, 2015, 146 : 48 - 52
  • [29] Non-volatile memory device based on mobile protons in SiO2 thin films
    Vanheusden, K
    Warren, WL
    Devine, RAB
    Fleetwood, DM
    Schwank, JR
    Shaneyfelt, MR
    Winokur, PS
    Lemnios, ZJ
    NATURE, 1997, 386 (6625) : 587 - 589
  • [30] Temperature Effects on a Non-Volatile Memory Device with Ferroelectric Capacitor
    John, Caroline S.
    Macleod, Todd C.
    Evans, Joe
    Ho, Fat D.
    INTEGRATED FERROELECTRICS, 2014, 157 (01) : 23 - 30