Exciton-LO-phonon coupling in self-organized InAs/GaAs quantum dots

被引：5
|
作者：
Heitz, R [1 ]
Schliwa, A [1 ]
Bimberg, D [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2003年 / 237卷 / 01期
关键词：
D O I：
10.1002/pssb.200301765
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The exciton-LO-phonon interaction in self-organized quantum dots is investigated emphasizing the impact of realistic structural properties. The possibility to engineer the local charge density via the shape and composition profile of such strained quantum dots provides an unique opportunity to optimize the electronic and optical properties of a semiconductor nanostructure. Size-selective luminescence, resonant Raman scattering, and time-resolved luminescence experiments provide insight into the exciton-LO-phonon and exciton-photon couplings in self-organized quantum dots. The impact of the structural details is analyzed based on eight-band k(.)p model calculations.
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页码：308 / 319
页数：12
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