Tuned exciton kinetics in self-organized InGaAs/GaAs quantum dots

被引：3
|
作者：
Born, H [1 ]
Heitz, R [1 ]
Hoffmann, A [1 ]
Bimberg, D [1 ]
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
exciton; quantum dot; time-resolved photoluminescence;
D O I：
10.1016/S1386-9477(01)00527-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The exciton dynamics in self-organized InGaAs/GaAs quantum dots with systematically varying structural properties is investigated by time-resolved photoluminescence spectroscopy. Decreasing the lateral confinement by ex-situ annealing increases the exciton lifetime and accelerates intradot relaxation. The altered exciton dynamics is attributed to the decreasing electron-hole overlap in the annealed QDs, resulting from the smoother confinement potential. The results demonstrate the effect of the actual confinement potential on the exciton-photon and exciton-phonon interactions, pointing out possible pathways to device optimization. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：233 / 236
页数：4
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