Engineering exciton dynamics in self-organized quantum dots

被引：2
|
作者：
Heitz, R [1 ]
机构：
[1] Tech Univ, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 16卷 / 01期
关键词：
quantum dot; exciton; oscillator strength; Frohlich coupling;
D O I：
10.1016/S1386-9477(02)00588-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The dynamics of excitons localized in self-organized ln(Ga)As,,GaAs quantum dots is investigated, demonstrating a pronounced influence of the actual structural properties on the relaxation and recombination processes. The complex confining potential in such strained, inhomogeneous quantum dots affects the electron,,hole overlap and, thus. the oscillator strength as well as the Frohlich coupling to LO-phonons. Both relaxation- and recombination-limited intradot exciton dynamics are demonstrated and correlated to the structural properties of the quantum dots. The results suggest a unique potential to engineer exciton dynamics in self-organized quantum dots. utilizing the bandwidth of structural propel-ties obtainable in strained heteroepitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：68 / 75
页数：8
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