Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

被引：2

作者：

Zhuang, QD ^{[1
]}

Li, JM ^{[1
]}

Zeng, YP ^{[1
]}

Pan, L ^{[1
]}

Chen, YH ^{[1
]}

Kong, MY ^{[1
]}

Lin, LY ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Novel Mat Ctr, Beijing 100083, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 05期

关键词：

InGaAs GaAs quantum dots; infrared absorption; self-organization;

D O I：

10.1007/s11664-999-0102-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

引用

页码：503 / 505

页数：3

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