Phonon dephasing of the exciton in InAs/GaAs quantum dots

被引:0
|
作者
Janutka, A [1 ]
Jacak, L
Krasnyj, J
Machnikowski, P
机构
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
[2] Univ Opole, Inst Math, PL-45051 Opole, Poland
[3] Univ Munster, Inst Festkorpertheorie, D-48149 Munster, Germany
来源
OPEN SYSTEMS & INFORMATION DYNAMICS | 2004年 / 11卷 / 04期
关键词
D O I
10.1007/s11080-004-6630-6
中图分类号
O29 [应用数学];
学科分类号
070104 ;
摘要
The interaction of a exciton confined in a semiconductor quantum dot (QD) with bulk phonons (acoustical and optical) responsible for the exciton dephasing is studied. The decoherence of the exciton due to the creation of a polaron with long-living or decaying phonons is described. Characteristic dephasing times for an InAs/GaAs QD are estimated using Green function methods in order to determine fundamental time limitations for use of the QD exciton in quantum information processing.
引用
收藏
页码:391 / 400
页数:10
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