Noise characterization of gated silicon p-n diodes

The low frequency noise of gated p-n(+) silicon diodes fabricated near the top surface of four differently grown silicon wafers was measured as a function of frequency, gate bias, and current at room temperature. The excess noise observed in the 3Hz to 1KHz spectral window is attributed to trap occupancy fluctuations inside the space charge region stemming from hole initiated level transitions between the valence band and trap levels associated with interstitial oxygen defect centers.