ZnO tetrapod p-n junction diodes

被引：19
|
作者：
Newton, Marcus C. [1 ]
Shaikhaidarov, Rais [2 ]
机构：
[1] UCL, London Ctr Nanotechnol, London WC1H 0AH, England
[2] Royal Holloway Univ London, Dept Phys, Egham TW20 0EX, Surrey, England
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 15期
关键词：
II-VI semiconductors; impact ionisation; nanostructured materials; p-n junctions; semiconductor diodes; ultraviolet radiation effects; wide band gap semiconductors; zinc compounds; NANOWIRE; PHOTOLUMINESCENCE; PHOTODETECTION;
D O I：
10.1063/1.3119630
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
ZnO nanocrystals hold the potential for use in a wide range of applications particularly in optoelectronics. We report on the fabrication of a highly sensitive p-n junction diode structure based on a single ZnO tetrapod shaped nanocrystal. This device shows a noted response to ultraviolet light with high internal gain. The high reponsivities we have observed exceed 10(4) A/W and are likely due to impact-ionization effects at the p-n junction interface.
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页数：3
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