Characterization of dislocations at the emission site by emission microscopy in GaN p-n diodes

被引：3
|
作者：
Ishikawa, Yukari [1 ]
Sugawara, Yoshihiro [1 ]
Yokoe, Daisaku [1 ]
Sato, Koji [1 ]
Yao, Yongzhao [1 ]
Watanabe, Kenta [2 ]
Okawa, Takashi [2 ]
机构：
[1] Japan Fine Ceram Ctr, 2-4-1 Mutsuno, Atsuta, Nagoya 4568587, Japan
[2] MIRISE Technol Corp, Nisshin 4700111, Japan
来源：
JOURNAL OF MATERIALS SCIENCE | 2023年 / 58卷 / 22期
基金：
日本学术振兴会;
关键词：
REVERSE-BIAS LEAKAGE; SCREW DISLOCATIONS; EPITAXIAL-GROWTH; FILMS; CONVERSION; SUBSTRATE; DEFECTS;
D O I：
10.1007/s10853-023-08596-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The character of dislocations at the emission sites observed in p-n diodes on (0001) GaNby emission microscopyunder reverse biasing is investigated. The dislocation is a c-type threading dislocation formed by the reaction of c+a and -a dislocations. The c-type threading dislocation is closed-core, screw type, and helical, formed by vacancy desorption with a 0.2 lmcavity approximately 2 mu mbeneath the surface. The band-edge photoluminescenceunder multiphoton excitation at the dislocation in the p layer is brighter than that of the surrounding non-defective area.
引用
收藏
页码：9221 / 9232
页数：12
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