Characterization of dislocations at the emission site by emission microscopy in GaN p-n diodes

被引：3

作者：

Ishikawa, Yukari ^{[1
]}

Sugawara, Yoshihiro ^{[1
]}

Yokoe, Daisaku ^{[1
]}

Sato, Koji ^{[1
]}

Yao, Yongzhao ^{[1
]}

Watanabe, Kenta ^{[2
]}

Okawa, Takashi ^{[2
]}

机构：

[1] Japan Fine Ceram Ctr, 2-4-1 Mutsuno, Atsuta, Nagoya 4568587, Japan

[2] MIRISE Technol Corp, Nisshin 4700111, Japan

来源：

JOURNAL OF MATERIALS SCIENCE | 2023年 / 58卷 / 22期

基金：

日本学术振兴会;

关键词：

REVERSE-BIAS LEAKAGE; SCREW DISLOCATIONS; EPITAXIAL-GROWTH; FILMS; CONVERSION; SUBSTRATE; DEFECTS;

D O I：

10.1007/s10853-023-08596-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The character of dislocations at the emission sites observed in p-n diodes on (0001) GaNby emission microscopyunder reverse biasing is investigated. The dislocation is a c-type threading dislocation formed by the reaction of c+a and -a dislocations. The c-type threading dislocation is closed-core, screw type, and helical, formed by vacancy desorption with a 0.2 lmcavity approximately 2 mu mbeneath the surface. The band-edge photoluminescenceunder multiphoton excitation at the dislocation in the p layer is brighter than that of the surrounding non-defective area.

引用

页码：9221 / 9232

页数：12

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