Atomic steps on sublimating Si(001) surface observed by atomic force microscopy

被引：0
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作者：
Rodyakina, EE [1 ]
Kosolobov, SS
Sheglov, DV
Nasimov, DA
Song, SA
Latyshev, AV
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
[3] Samsung Adv Inst Technol, Suwon 440600, South Korea
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2004年 / 1-2卷
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O59 [应用物理学];
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摘要：
Atomic-force microscopy (AFM) at ambient conditions has been applied to study the monatomic step distribution on the silicon (001) surface during sublimation at electric current heating. The computer treatment of topological and phase-contrast AFM-images was used for quantitative characterization of dynamic surface phenomena. The dependence of average terrace width on step number in the bunch was measured. Repulsion force between closer packed monatomic steps was shown whereas attractive force between the step and island separated by longer distance was revealed.
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页码：9 / 17
页数：9
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