SURFACE OF GAAS/SI OBSERVED BY ATOMIC-FORCE MICROSCOPY

被引：4

作者：

MORI, H

TACHIKAWA, M

YAMADA, T

SASAKI, T

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 154卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)00204-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Atomic force microscopy (AFM) observations of the surface of GaAs grown on Si substrates show spirals starting from dislocations and comples of two planar defects (stacking faults and microtwins). These defects are the sources of hillocks on the GaAs surface. AFM also reveals dislocation-terminated steps and stacking faults with shadows. Spirals and stacking fault shadows characterize the surface morphology of GaAs grown on Si substrates. The defect densities measured by atomic force microscopy and transmission electron microscopy are compared.

引用

页码：23 / 26

页数：4

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