Striations on Si trench sidewalls observed by atomic force microscopy

被引：18

作者：

Yahata, A ^{[1
]}

Urano, S ^{[1
]}

Inoue, T ^{[1
]}

机构：

[1] Toshiba Corp, Ctr Res & Dev, Adv Semicond Devices Res Labs, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 11期

关键词：

trench; sidewall; atomic force microscopy; striations; channel mobility; MOS; resist;

D O I：

10.1143/JJAP.36.6722

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic force microscopy (AFM) measurements revealed many striations on the Si trench sidewalls fabricated by reactive ion etching (RIE). The trench sidewall surface was rougher when a resist with a rougher surface was employed as a mask, whereas it was smoother when a resist with a smoother surface was employed. This result strongly suggests that the roughness of the resist is one of the causes of the roughness of the trench sidewalls.

引用

页码：6722 / 6723

页数：2

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