Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 323-327, 1995)

被引：0
|
作者：
Auret, FD [1 ]
Goodman, SA [1 ]
Erasmus, RM [1 ]
Meyer, WE [1 ]
Myburg, G [1 ]
机构：
[1] UNIV PRETORIA,DEPT PHYS,ZA-0002 PRETORIA,SOUTH AFRICA
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：323 / 327
页数：5
相关论文
共 50 条
  • [31] Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantation (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 281-288, 1995)
    Glaser, E
    Bachmann, T
    Schulz, R
    Schippel, S
    Richter, U
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 281 - 288
  • [32] The temperature dependence of ion-beam-induced amorphization in beta-SiC (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 298-302, 1995)
    Weber, WJ
    Wang, LM
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 298 - 302
  • [33] The residual electrically active damage in ion implanted Si (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 248-251, 1995)
    Kringhoj, P
    Fatima, S
    Williams, JS
    Jagadish, C
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 248 - 251
  • [34] Investigation of radiation damage in ion implanted and annealed SiC layers (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 339-345, 1995)
    Wesch, W
    Helft, A
    Heindl, J
    Strunk, HP
    Bachmann, T
    Glaser, E
    Wendler, E
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 339 - 345
  • [35] High-dose oxygen ion implanted heterointerfaces in silicon (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 372-378, 1995)
    Ashok, S
    Krishnan, S
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 372 - 378
  • [36] Radiation damage and conductivity changes in ion implanted diamond (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 555-559, 1995)
    Yang, Q
    King, BV
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 555 - 559
  • [37] Surface treatment by low energy metal ion irradiation (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 159-164, 1995)
    Weber, T
    Verhoeven, J
    Saris, FW
    Osipowicz, T
    Munz, WD
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 159 - 164
  • [38] Implantation-induced defects in high-dose O-implanted Si (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 409-414, 1995)
    Ellingboe, SL
    Ridgway, MC
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 409 - 414
  • [39] Electronic stopping power of [100] axial-channelled He ions in Si crystals (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 51-54, 1995)
    dosSantos, JHR
    Grande, PL
    Boudinov, H
    Behar, M
    Stoll, R
    Klatt, C
    Kalbitzer, S
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 51 - 54
  • [40] Ion beam induced epitaxial crystallization and interfacial amorphization at amorphous/crystalline interfaces in germanium (reprinted from Nuclear Instruments and methods in Physics Research, vol 106, pg 350-354, 1995)
    Bachmann, T
    Schulz, R
    Glaser, E
    Richter, U
    Schippel, S
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 350 - 354
12345