The temperature dependence of ion-beam-induced amorphization in beta-SiC (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 298-302, 1995)

被引：0
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作者：
Weber, WJ [1 ]
Wang, LM [1 ]
机构：
[1] BATTELLE MEM INST,PACIFIC NW LABS,RICHLAND,WA 99352
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：298 / 302
页数：5
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