Ion mass dependence of normalized regrowth rate in MeV ion beam induced epitaxial crystallization (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 277-280, 1995)

被引：0
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作者：
Kinomura, A [1 ]
Chayahara, A [1 ]
Horino, Y [1 ]
Mokuno, Y [1 ]
Fujii, K [1 ]
机构：
[1] AIST,OSAKA NATL RES INST,IKEDA,OSAKA 563,JAPAN
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：277 / 280
页数：4
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