Electronic and annealing properties of a metastable He-ion implantation induced defect in GaAs (reprinted from Nuclear Instruments and Methods in Physics Research, vol 106, pg 323-327, 1995)

被引：0
|
作者：
Auret, FD [1 ]
Goodman, SA [1 ]
Erasmus, RM [1 ]
Meyer, WE [1 ]
Myburg, G [1 ]
机构：
[1] UNIV PRETORIA,DEPT PHYS,ZA-0002 PRETORIA,SOUTH AFRICA
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：323 / 327
页数：5
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