High Hole Mobility in Multiple Silicon Nanowire Gate-All-Around pMOSFETs on (110) SOI

被引：0
|
作者：
Chen, Jiezhi [1 ]
Saraya, Takuya [1 ]
Hiramoto, Toshiro [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
来源：
2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2009年
关键词：
STRAINED-SI; ENHANCEMENT; DEPENDENCE; TRANSPORT; MOSFETS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Systematic study on hole mobility in gate-all-around (GAA) multiple Si nanowire (NW) pFETs on (110) SOI is presented for the first time. [110]-NWs show high mobility, 2.4x enhancement over universal (100) mobility, even in high N-inv region and in narrow (25nm) NWs. Furthermore, effects of uniaxial tensile stress are also investigated, indicating that [110] direction uniaxial stress is effective to modulate hole mobility in NWs.
引用
收藏
页码：90 / 91
页数：2
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