High-performance gate-all-around polycrystalline silicon nanowire with silicon nanocrystals nonvolatile memory

被引：47
|
作者：
Hung, Min-Feng [1 ]
Wu, Yung-Chun [1 ]
Tang, Zih-Yun [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期
关键词：
FLASH MEMORY; NAND FLASH; TECHNOLOGY; 30NM;
D O I：
10.1063/1.3582925
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nonvolatile memory (NVM) that is based on gate-all-around (GAA) and polycrystalline silicon (poly-Si) nanowires structure with silicon nanocrystals (NCs) as the storage nodes is demonstrated. The GAA poly-Si-SiO(2)-Si(3)N(4)-SiO(2)-poly-Si (SONOS) NVMs are also fabricated and compared. The GAA NCs NVMs have a 4.2 V of threshold voltage shift at 18 V for 1 ms, and are faster than the GAA SONOS NVMs do. In reliability studies, this NVM shows superior endurance after 10(4) program/erase (P/E) cycles, and loses only 14% of its charges lose after ten years at 85 degrees C. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3582925]
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页数：3
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