Tandem GaSb/InGaAsSb thermophotovoltaic cells

被引：9
|
作者：
Andreev, VM [1 ]
Khvostikov, VP [1 ]
Larionov, VR [1 ]
Rumyantsev, VD [1 ]
Sorokina, SV [1 ]
Shvarts, MZ [1 ]
Vasil'ev, VI [1 ]
Vlasov, AS [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年
关键词：
D O I：
10.1109/PVSC.1997.654241
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Computer modelling of a tandem TPV system has been carried out. The monolithic GaSb/InGaAsSb tandem TPV devices have been designed and fabricated by LPE. The cell consists of: nGaSb (substrate); (n-p)InxGa1-xAsySb1-y (E-g approximate to 0.56 eV, bottom cell); p(++)-n(++)GaSb (tunnel junction); (n-p)-GaSb (top cell). External quantum yields of 80% at 800-1600 nm wavelength (top cell) and of about 75% at 1800-2100 nm (bottom cell) have been measured. V-oc=0.61V and FF=0.75 were achieved in a tandem cell at current density of 0.7 A/cm(2).
引用
收藏
页码：935 / 938
页数：4
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