Tandem GaSb/InGaAsSb thermophotovoltaic cells

被引：10

作者：

Andreev, VM ^{[1
]}

Khvostikov, VP ^{[1
]}

Larionov, VR ^{[1
]}

Rumyantsev, VD ^{[1
]}

Sorokina, SV ^{[1
]}

Shvarts, MZ ^{[1
]}

Vasil'ev, VI ^{[1
]}

Vlasov, AS ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654241

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Computer modelling of a tandem TPV system has been carried out. The monolithic GaSb/InGaAsSb tandem TPV devices have been designed and fabricated by LPE. The cell consists of: nGaSb (substrate); (n-p)InxGa1-xAsySb1-y (E-g approximate to 0.56 eV, bottom cell); p(++)-n(++)GaSb (tunnel junction); (n-p)-GaSb (top cell). External quantum yields of 80% at 800-1600 nm wavelength (top cell) and of about 75% at 1800-2100 nm (bottom cell) have been measured. V-oc=0.61V and FF=0.75 were achieved in a tandem cell at current density of 0.7 A/cm(2).

引用

页码：935 / 938

页数：4

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