Fabrication and simulation of GaSb thermophotovoltaic cells

被引：98
|
作者：
Sulima, OV [1 ]
Bett, AW [1 ]
机构：
[1] Fraunhofer Inst Solar Energy Syst, D-79100 Freiburg, Germany
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期
关键词：
photovoltaic cells; thermophotovoltaics; GaSb; Zn diffusion;
D O I：
10.1016/S0927-0248(00)00235-X
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper we report on the recent progress in fabrication and simulation of GaSb photovoltaic (PV) cells with a Zn diffused emitter. The form of Zn profiles in the emitter has an essential impact on the power output of a PV cell. Different types of Zn profiles were realized and used for simulation of PV device parameters. Calculations based on PV cell measurements show that efficiencies up to 30% can be achieved assuming a blackbody temperature of 1300-1500 K and a perfect band edge filter. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：533 / 540
页数：8
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