GaSb/InGaAsSb tandem thermophotovoltaic cells for space applications

被引：0
|
作者：
Shvarts, MZ [1 ]
Andreev, VM [1 ]
Khvostikov, VP [1 ]
Larionov, VR [1 ]
Rumyantsev, VD [1 ]
Sorokina, SV [1 ]
Vasil'ev, VI [1 ]
Vlasov, AS [1 ]
Chosta, OI [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
PROCEEDINGS OF THE FIFTH EUROPEAN SPACE POWER CONFERENCE (ESPC), VOLS 1 AND 2 | 1998年 / 416卷
关键词：
thermophotovoltaic cell; GaSb/InGaAsSb; radiation resistance;
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
GaSb and InGaAsSb single junction as well as tandem photovoltaic cells for thermophotovoltaic (TPV) generators were developed and investigated. LPE growth from Ga, Pb, Sb - rich melts and Zn - diffusion from the vapor phase were applied for TPV cells fabrication. The highest photoluminescent intensity from n-GaSb layers and the highest external quantum yield of 90-96% in GaSb cells were obtained when Ga-rich melt was used for LPE growth. Monolithic tandem GaSb/InGaAsSb with V-OC=0.6 V has been fabricated. Results of 3 MeV electron irradiation to a fluence of 3.10(15)cm(-2) are presented for GaSb and InGaAsSb TPV cells.
引用
收藏
页码：527 / 532
页数：6
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