Multi-Junction Switching in Bi2Sr1.6La0.4CuO6+δ Intrinsic Josephson Junctions

被引：7
|
作者：
Kashiwaya, Hiromi [1 ]
Matsumoto, Tetsuro [1 ]
Shibata, Hajime [1 ]
Eisaki, Hiroshi [1 ]
Yoshida, Yoshiyuki [1 ]
Kambara, Hiroshi [1 ]
Kawabata, Shiro [2 ]
Kashiwaya, Satoshi [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, NeRI, Tsukuba, Ibaraki 3058568, Japan
[2] AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 04期
基金：
日本学术振兴会;
关键词：
D O I：
10.1143/APEX.3.043101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions (N) was successfully tuned by changing the load resistance serially connected to an Bi2Sr1.6La0.4CuO6+delta IJJ array. The independence of the escape rates of N in the macroscopic quantum tunneling regime indicates that MJS is a successive switching process rather than a collective process. The origin of MJS is explained by the gradient of a load curve and the relative magnitudes of the switching currents of quasiparticle branches in the current-voltage plane. (C) 2010 The Japan Society of Applied Physics
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页数：3
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