Multi-Junction Switching in Bi2Sr1.6La0.4CuO6+δ Intrinsic Josephson Junctions

被引：7

作者：

Kashiwaya, Hiromi ^{[1
]}

Matsumoto, Tetsuro ^{[1
]}

Shibata, Hajime ^{[1
]}

Eisaki, Hiroshi ^{[1
]}

Yoshida, Yoshiyuki ^{[1
]}

Kambara, Hiroshi ^{[1
]}

Kawabata, Shiro ^{[2
]}

Kashiwaya, Satoshi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, NeRI, Tsukuba, Ibaraki 3058568, Japan

[2] AIST, Nanotechnol Res Inst, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 04期

基金：

日本学术振兴会;

关键词：

D O I：

10.1143/APEX.3.043101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the dynamics of multi-junction switching (MJS): several intrinsic Josephson junctions (IJJs) in an array switch to the finite voltage state simultaneously. The number of multi-switching junctions (N) was successfully tuned by changing the load resistance serially connected to an Bi2Sr1.6La0.4CuO6+delta IJJ array. The independence of the escape rates of N in the macroscopic quantum tunneling regime indicates that MJS is a successive switching process rather than a collective process. The origin of MJS is explained by the gradient of a load curve and the relative magnitudes of the switching currents of quasiparticle branches in the current-voltage plane. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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