Temperature dependences of jump voltage in Bi2Sr2CaCu2Ox intrinsic Josephson junctions

被引:0
|
作者
Kato, T. [1 ]
Kawakami, A. [2 ]
Okanoue, K. [1 ]
Yasui, K. [1 ]
Hamasaki, K. [1 ]
机构
[1] Nagaoka Univ Technol, Dept Elect Engn, 1603-1 Kamitomioka, Nagaoka, Niigata 9402188, Japan
[2] Kobe Adv ICT Res Ctr, Natl Inst Informat & Commun Technol, Kobe, Hyogo 6512492, Japan
来源
SUPERCONDUCTIVITY CENTENNIAL CONFERENCE 2011 | 2012年 / 36卷
关键词
Bi-2212 intrinsic Josephson junctions; subgap resistance; jump voltage;
D O I
10.1016/j.phpro.2012.06.172
中图分类号
O412 [相对论、场论]; O572.2 [粒子物理学];
学科分类号
摘要
The basic experimental features of voltage jump V-J, between two adjacent branches in stacked Bi2Sr2CaCu2Ox intrinsic Josephson junctions (IJJs) are discussed. The temperature dependence of the V-J normalized to its value at 4.2 K, V-J(T)/V-J(4.2K), exhibited a downward deviation from a BCS temperature dependence of gap voltage. In this study, we assume that the critical current I-c, much smaller than that expected from the Ambegaokar-Baratoff (AB) theory is the intrinsic feature for IJJs. To interpret the V-J(T) characteristics, the linear approximation for the subgap quasiparticle current is also examined and a linear subgap resistance model is proposed as follows: R-J,R-sg(T)=R-J,R-sg(0)/[1+exp(k(o)(T-T-c/2)], where k(o) is constant. Under these assumptions, the voltage jump is given by V-J(T)=R-J,R-sg(T) x I-c(T). The normalized V-J(T)/V-J(4.2) characteristics for all samples with different V-J and I-c values are well explained using this model. (C) 2012 Published by Elsevier B.V. Selection and/or peer-review under responsibility of the Guest Editors.
引用
收藏
页码:588 / 591
页数:4
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