Quenching interface recombination in wide bandgap Cu(In,Ga)Se2 by potassium treatment

被引：8
|
作者：
Zahedi-Azad, Setareh [1 ]
Scheer, Roland [1 ]
机构：
[1] Martin Luther Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Saale, Germany
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 6 | 2017年 / 14卷 / 06期
关键词：
Cu(In; Ga)Se-2; interface recombination; KF post-deposition treatment; wide band-gap; SOLAR-CELLS; EFFICIENCY;
D O I：
10.1002/pssc.201600203
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this contribution, we report on the increase of the output voltage for wide bandgap (E-g > 1.4 eV) Cu(In,Ga)Se-2 films by doping potassium via post-deposition treatment of the grown absorber layer. Also the carrier collection is improved by Potassium fluoride treatment (KF). The difference between KF-treated and untreated samples is investigated using J-V parameters, external quantum efficiency (EQE), and V-OC(t) transients under red illumination. Statistics shows an increased activation energy of saturation current and a trend toward a positive dV(OC)/dt. Thus the increased V-OC can be explained through partially quenched recombination at the interface of buffer/absorber layer. (C) 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Control of valence band offset at CdS/Cu(In,Ga)Se2 interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se2 solar cells
    Nishimura, Takahito
    Hirai, Yoshiaki
    Kurokawa, Yasuyoshi
    Yamada, Akira
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (08)
  • [2] WIDE BANDGAP CU(GA,IN)SE2/(ZN,CD)S HETEROJUNCTIONS
    KLENK, R
    MAUCH, RH
    MENNER, R
    SCHOCK, HW
    [J]. CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 1443 - 1447
  • [3] Wide bandgap Cu(In,Ga)Se2 solar cells with improved energy conversion efficiency
    Contreras, Miguel A.
    Mansfield, Lorelle M.
    Egaas, Brian
    Li, Jian
    Romero, Manuel
    Noufi, Rommel
    Rudiger-Voigt, Eveline
    Mannstadt, Wolfgang
    [J]. PROGRESS IN PHOTOVOLTAICS, 2012, 20 (07): : 843 - 850
  • [4] Impact of KF-post deposition treatment on Cu(In,Ga)Se2 surface and Cu(In, Ga)Se2/CdS interface sulfurization
    Harel, S.
    Jonnard, P.
    Lepetit, T.
    Arzel, L.
    Barreau, N.
    [J]. APPLIED SURFACE SCIENCE, 2019, 473 : 1062 - 1065
  • [5] Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers
    Hultqvist, Adam
    Li, Jian V.
    Kuciauskas, Darius
    Dippo, Patricia
    Contreras, Miguel A.
    Levi, Dean H.
    Bent, Stacey F.
    [J]. APPLIED PHYSICS LETTERS, 2015, 107 (03)
  • [6] Bandgap imaging in Cu(In,Ga)Se2 photovoltaic modules by electroluminescence
    Bokalic, Matevz
    Pieters, Bart E.
    Gerber, Andreas
    Rau, Uwe
    Topic, Marko
    [J]. PROGRESS IN PHOTOVOLTAICS, 2017, 25 (02): : 184 - 191
  • [7] RbF post deposition treatment for narrow bandgap Cu(In, Ga)Se2 solar cells
    Feurer, Thomas
    Fu, Fan
    Weiss, Thomas Paul
    Avancini, Enrico
    Lockinger, Johannes
    Buecheler, Stephan
    Tiwari, Ayodhya N.
    [J]. THIN SOLID FILMS, 2019, 670 : 34 - 40
  • [8] Electrical properties of CdS/Cu(In,Ga)Se2 interface
    Li, Jian V.
    Mansfield, Lorelle M.
    Egaas, Brian
    Ramanathan, Kannan
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (08)
  • [9] Improvement of Cu(In,Ga)Se2 photovoltaic performance by adding Cu-poor compounds Cu(In,Ga)3Se5 at Cu(In,Ga)Se2/CdS interface
    Toki, Soma
    Nishimura, Takahito
    Sugiura, Hiroki
    Nakada, Kazuyoshi
    Yamada, Akira
    [J]. 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 512 - 517
  • [10] Chemical Trend of Nonradiative Recombination in Cu(In,Ga)Se2 Alloys
    Dou, Baoying
    Falletta, Stefano
    Neugebauer, Joerg
    Freysoldt, Christoph
    Zhang, Xie
    Wei, Su -Huai
    [J]. PHYSICAL REVIEW APPLIED, 2023, 19 (05):
12345