Control of valence band offset at CdS/Cu(In,Ga)Se2 interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se2 solar cells

被引：22

作者：

Nishimura, Takahito ^{[1
]}

Hirai, Yoshiaki ^{[1
]}

Kurokawa, Yasuyoshi ^{[1
]}

Yamada, Akira ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Photovolta Res Ctr PVREC, Meguro Ku, Tokyo 1528552, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 08期

关键词：

RAMAN-SPECTRA; THIN-FILMS; EFFICIENCY; CUIN3SE5; CUINSE2; SURFACE; LAYER;

D O I：

10.7567/JJAP.54.08KC08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We inserted Cu(In,Ga)(3)Se-5 into the CdS/Cu(In,Ga)Se-2 interface of Cu(In,Ga)Se-2 solar cells with a flat band profile and energy bandgaps (E-g) of 1.2 and 1.4 eV in order to investigate the repelling of holes by the effect of valence band offset (Delta E-v). We found that open circuit voltage (V-OC) was clearly improved from 0.66 to 0.75V with E-g of 1.4 eV, although V-OC was only increased from 0.63 to 0.64 V with E-g of 1.2 eV. For high efficiency, we fabricated Cu(In,Ga)Se-2 solar cells with a single-graded band profile and an average E-g of 1.4 eV. Eventually, a conversion efficiency of 14.4% was obtained when Cu(In,Ga)(3)Se-5 with a thickness of 30 nm was inserted, although the conversion efficiency was 10.5% without Cu(In,Ga)(3)Se-5. These results suggest the importance of Delta E-v in the suppression of interfacial recombination by repelling holes and possibility that the highest efficiency of Cu(In,Ga)Se-2 solar cells with an average E-g of 1.4 eV could be achieved. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

共 50 条

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[J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 6, 2017, 14 (06):
[4] Control of conduction band offset in wide-gap Cu(In,Ga)Se2 solar cells
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