Improvement of Cu(In,Ga)Se2 photovoltaic performance by adding Cu-poor compounds Cu(In,Ga)3Se5 at Cu(In,Ga)Se2/CdS interface

被引：0
|
作者：
Toki, Soma [1 ]
Nishimura, Takahito [1 ]
Sugiura, Hiroki [1 ]
Nakada, Kazuyoshi [2 ]
Yamada, Akira [2 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo, Japan
[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo, Japan
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
Cd diffusion; CdS/CIGS interface; CIGS; Cu-poor; photovoltaic cells; valence band offset;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We report on the improvement of Cu(In,Ga)Se-2 (CIGS) photovoltaic performance by inserting Cu-poor compounds Cu(In,Ga)(3)Se-5 at CIGS/CdS interface. It was experimentally found that formation of the Cu(In,Ga)(3)Se-5 layer at the CdS/CIGS interface was quite important to boost the photovoltaic performance. Cd diffusion was promoted by introducing the layer, and conductivity type turned to n-type near the surface. As a result, cell performance was improved owing to suppression of recombination at the interface by stronger band-bending. Additionally, it was shown that the interval time before the growth of the Cu(In,Ga)(3)Se-5 layer is important to eliminate the Cu intermixing in CIGS.
引用
收藏
页码：512 / 517
页数：6
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