RbF post deposition treatment for narrow bandgap Cu(In, Ga)Se2 solar cells

被引：35
|
作者：
Feurer, Thomas [1 ]
Fu, Fan [1 ,2 ]
Weiss, Thomas Paul [1 ,3 ]
Avancini, Enrico [1 ]
Lockinger, Johannes [1 ]
Buecheler, Stephan [1 ]
Tiwari, Ayodhya N. [1 ]
机构：
[1] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Ueberlandstr 129, CH-8600 Dubendorf, Switzerland
[2] EPFL, Photovolta & Thin Film Elect Lab PV Lab, Rue Maladiere 71b, CH-2002 Neuchatel, Switzerland
[3] Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, L-4422 Belvaux, Luxembourg
来源：
THIN SOLID FILMS | 2019年 / 670卷
基金：
瑞士国家科学基金会;
关键词：
Photovoltaics; Copper indium gallium selenide; Narrow bandgap; Thin film solar cells; Tandem solar cells; Rubidium fluoride; Post deposition treatment; CU(IN; GA)SE-2; THIN-FILMS; POSTDEPOSITION TREATMENT; EFFICIENCY;
D O I：
10.1016/j.tsf.2018.12.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Multi-junction solar cells are known to have a considerably increased efficiency potential over their typical single junction counterparts. In order to produce low cost and lightweight multi-junction devices, the availability of suitable narrow (< 1.1 eV) bandgap bottom cells is paramount. A possible absorber for such a bottom cell is the Cu(In, Ga)Se-2 (CIGS) compound semiconductor, one of the most efficient thin film materials to date. In this contribution we report on the RbF post deposition treatment of narrow bandgap CIGS absorbers grown with a single bandgap grading approach. We discuss the necessary deposition conditions and the observed improvements on solar cells performance. A certified record efficiency of 18.0% for an absorber with 1.00 eV optoelectronic bandgap is presented and its suitability for perovskite/CIGS tandem devices is shown.
引用
收藏
页码：34 / 40
页数：7
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