Energetics of quantum antidot states in the quantum Hall regime

被引：45
|
作者：
Maasilta, IJ [1 ]
Goldman, VJ [1 ]
机构：
[1] SUNY Stony Brook, Dept Phys, Stony Brook, NY 11794 USA
来源：
PHYSICAL REVIEW B | 1998年 / 57卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.57.R4273
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling linewidths as a function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot-bound states, self-consistent edge electric field, and edge excitation drift velocity. [S0163-1829(98)50512-7].
引用
收藏
页码：R4273 / R4276
页数：4
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