Energetics of quantum antidot states in the quantum Hall regime

被引：45

作者：

Maasilta, IJ ^{[1
]}

Goldman, VJ ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept Phys, Stony Brook, NY 11794 USA

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.57.R4273

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report experiments on the energy structure of antidot-bound states. By measuring resonant tunneling linewidths as a function of temperature, we determine the coupling to the remote global gate voltage and find that the effects of interelectron interaction dominate. Within a simple model, we also determine the energy spacing of the antidot-bound states, self-consistent edge electric field, and edge excitation drift velocity. [S0163-1829(98)50512-7].

引用

页码：R4273 / R4276

页数：4

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