Localization in the quantum Hall regime

被引:27
|
作者
Kramer, B
Kettemann, S
Ohtsuki, T
机构
[1] Univ Hamburg, Inst Theoret Phys, D-20355 Hamburg, Germany
[2] Sophia Univ, Dept Phys, Tokyo 1028554, Japan
来源
关键词
quantum Hall effect; localization scaling; network model; Anderson transition; critical field theory;
D O I
10.1016/j.physe.2003.09.034
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The localization properties of electron states in the quantum Hall regime are reviewed. The random Landau model, the random matrix model, the tight-binding Peierls model, and the network model of Chalker and Coddington are introduced. Descriptions in terms of equivalent tight-binding Hamiltonians, and the 2D Dirac model, are outlined. Evidences for the universal critical behavior of the localization length are summarized. A short review of the supersymmetric critical field theory is provided. The interplay between edge states and bulk localization properties is investigated. For a system with finite width and with short-range randomness, a sudden breakdown of the two-point conductance from ne(2)/h to 0 (n integer) is predicted if the localization length exceeds the distance between the edges. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码:172 / 187
页数:16
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