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Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

被引：105
|
作者：
Chen, Min-Chen [1 ]
Chang, Ting-Chang [1 ,2 ]
Huang, Sheng-Yao [1 ]
Chen, Shih-Ching [1 ]
Hu, Chih-Wei [3 ,4 ]
Tsai, Chih-Tsung [1 ]
Sze, Simon M. [3 ,4 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 06期
关键词：
D O I：
10.1149/1.3360181
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
This study investigates a sputtered InGaZnO (IGZO) thin film to apply into a resistive random access memory device. After the formation of an indium tin oxide (ITO)/IGZO/ITO structure at room temperature, the device exhibits a repeatable bipolar resistance switching behavior without an electroforming process and an excellent transmittance in the visible region. The conduction mechanisms for low and high resistance states are dominated by Ohm's law and space-charge-limited current behavior, respectively. In retention and endurance tests, a resistance ratio of more than 1 order remains after 10(4) s at 90 degrees C and after 100 dc voltage sweeping cycles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3360181] All rights reserved.
引用
收藏
页码：II191 / II193
页数：3
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