Electrically injected single-defect photon bandgap surface-emitting laser at room temperature

被引：40
|
作者：
Zhou, WD [1 ]
Sabarinathan, J [1 ]
Kochman, B [1 ]
Berg, E [1 ]
Qasaimeh, O [1 ]
Pang, S [1 ]
Bhattacharya, P [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 18期
关键词：
D O I：
10.1049/el:20001131
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An electrically injected defect-mode photonic bandgap microcavity surface-emitting laser at room temperature is demonstrated for the first time. 931 nm lasing is observed under pulsed excitation conditions, with a threshold current of 300 mu A. Near- and far-field modal characteristics of the emission confirm lasing from the defect-related microcavity in the photonic bandgap crystal.
引用
收藏
页码：1541 / 1542
页数：2
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