Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser

被引：183
|
作者：
Saito, H
Nishi, K
Ogura, I
Sugou, S
Sugimoto, Y
机构：
[1] Opto-Electronics Res. Laboratories, NEC Corporation, Tsukuba, Ibaraki 305
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期
关键词：
D O I：
10.1063/1.116808
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-assembled growth of quantum dots by molecular-beam epitaxy is used to form the active region of a vertical-cavity surface-emitting laser (VCSEL). Ten layers of InGaAs quantum dots are stacked in order to increase the gain. This quantum-dot VCSEL has a continuous-wave operating current of 32 mA at room temperature. Emission spectra at various current injections demonstrate that the lasing action is associated with a higher-order transition in the quantum dots. (C) 1996 American Institute of Physics.
引用
收藏
页码：3140 / 3142
页数：3
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