Electrically injected single-defect photon bandgap surface-emitting laser at room temperature

被引：40

作者：

Zhou, WD ^{[1
]}

Sabarinathan, J ^{[1
]}

Kochman, B ^{[1
]}

Berg, E ^{[1
]}

Qasaimeh, O ^{[1
]}

Pang, S ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 18期

关键词：

D O I：

10.1049/el:20001131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An electrically injected defect-mode photonic bandgap microcavity surface-emitting laser at room temperature is demonstrated for the first time. 931 nm lasing is observed under pulsed excitation conditions, with a threshold current of 300 mu A. Near- and far-field modal characteristics of the emission confirm lasing from the defect-related microcavity in the photonic bandgap crystal.

引用

页码：1541 / 1542

页数：2

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