Electronic properties of III-nitride materials and basics of III-nitride FETs

被引：2
|
作者：
Asbeck, Peter M. [1 ]
机构：
[1] Univ Calif San Diego, San Diego, CA 92103 USA
来源：
III-NITRIDE ELECTRONIC DEVICES | 2019年 / 102卷
关键词：
PIEZOELECTRIC POLARIZATION; GAN; DEVICE;
D O I：
10.1016/bs.semsem.2019.08.013
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1 / 40
页数：40
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